IRG6I320UPBF

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Manufacturer part number:IRG6I320UPBF

Manufacturer:Infineon Technologies

Description:IRG6I320UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG6I320UPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	39W
Element Configuration	Single
Power Dissipation	39W
Input Type	Standard
Power - Max	39W
Collector Emitter Voltage (VCEO)	1.65V
Max Collector Current	24A
Collector Emitter Breakdown Voltage	330V
Voltage - Collector Emitter Breakdown (Max)	330V
Current - Collector (Ic) (Max)	24A
Collector Emitter Saturation Voltage	1.65V
Test Condition	196V, 12A, 10Ohm
Vce(on) (Max) @ Vge, Ic	1.65V @ 15V, 24A
IGBT Type	Trench
Gate Charge	46nC
Td (on/off) @ 25°C	24ns/89ns
Radiation Hardening	No
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.919646	$0.919646
10	$0.867591	$8.67591
100	$0.818482	$81.8482
500	$0.772152	$386.076
1000	$0.728446	$728.446

IRG6I320UPBF Description

The IRG6I320UPBF IGBT is specifically designed for applications in Plasma Display Panels. This IRG6I320UPBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRG6I320UPBF a highly efficient, robust, and reliable device for PDPapplications.