IRG6S320UTRLPBF

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Manufacturer part number:IRG6S320UTRLPBF

Manufacturer:Infineon Technologies

Description:IRG6S320UTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG6S320UTRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	260.39037mg
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	114W
Base Part Number	IRG6S320UPBF
Element Configuration	Single
Input Type	Standard
Power - Max	114W
Collector Emitter Voltage (VCEO)	1.65V
Max Collector Current	50A
Collector Emitter Breakdown Voltage	330V
Voltage - Collector Emitter Breakdown (Max)	330V
Current - Collector (Ic) (Max)	50A
Max Breakdown Voltage	330V
Test Condition	196V, 12A, 10Ohm
Vce(on) (Max) @ Vge, Ic	1.65V @ 15V, 24A
IGBT Type	Trench
Gate Charge	46nC
Td (on/off) @ 25°C	24ns/89ns
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$3.422080	$3.42208
10	$3.228377	$32.28377
100	$3.045639	$304.5639
500	$2.873244	$1436.622
1000	$2.710608	$2710.608

IRG6S320UTRLPBF Description

IRG6S320UTRLPBF is a 330v PDP Trench IGBT. This IGBT IRG6S320UTRLPBF is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VcE(on)and low EpuL .sETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.