IRG7CH11K10EF Description

IRG7CH11K10EF is a 1200V N-channel insulated gate bipolar transistor. Low VCE(ON) and switching losses provide high efficiency in a wide range of applications and switching frequencies. Square RBSOA and Maximum Junction Temperature 175°C makes improved reliability due to rugged hard switching performance and higher power capability. Positive VcE (ON) Temperature Coefficient provides excellent current sharing in parallel operation.

IRG7CH11K10EF Features

Low VcE(ON) and switching Losses

Square RBSOA and Maximum Junction Temperature 175°C

Positive VcE (ON) Temperature Coefficient

Collector-Emitter Voltage, Tj=25°C: 1200V

Clamped Inductive Load Current④: 200A

Gate Emitter Voltage: ±30V

IRG7CH11K10EF Applications

Medium Power Drives

UPS

HEV Inverter

Welding

Induction Heating