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IRG7CH30K10EF

IRG7CH30K10EF

IRG7CH30K10EF

Infineon Technologies

IRG7CH30K10EF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7CH30K10EF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
JESD-30 Code R-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 10A
Turn On Time 38.5 ns
Test Condition 600V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.56V @ 15V, 10A
Turn Off Time-Nom (toff) 311 ns
IGBT Type Trench
Gate Charge 4.8nC
Td (on/off) @ 25°C 10ns/90ns
Gate-Emitter Voltage-Max 30V
VCEsat-Max 2.2 V
Gate-Emitter Thr Voltage-Max 7.5V
RoHS Status ROHS3 Compliant
IRG7CH30K10EF Product Details

IRG7CH30K10EF Description


Produced by Infineon Technologies is IRG7CH30K10EF. It falls within the category of electronic components, ICs. It's used in a variety of industries, including communications gear, wired networking, industrial motor drives, and personal devices like PCs and notebooks. Trans IGBT Chip N-CH 1200V 10A Die on Film/Wafe is this part's primary specification. It is also environmentally friendly and RoHS compliant (lead-free).



IRG7CH30K10EF Features


  • RoHS: Lead free / RoHS Compliant



IRG7CH30K10EF Applications


  • Industrial

  • Personal electronics

  • Communications equipment


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