IRG7CH30K10EF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7CH30K10EF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Bulk
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
JESD-30 Code
R-XUUC-N2
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
10A
Turn On Time
38.5 ns
Test Condition
600V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.56V @ 15V, 10A
Turn Off Time-Nom (toff)
311 ns
IGBT Type
Trench
Gate Charge
4.8nC
Td (on/off) @ 25°C
10ns/90ns
Gate-Emitter Voltage-Max
30V
VCEsat-Max
2.2 V
Gate-Emitter Thr Voltage-Max
7.5V
RoHS Status
ROHS3 Compliant
IRG7CH30K10EF Product Details
IRG7CH30K10EF Description
Produced by Infineon Technologies is IRG7CH30K10EF. It falls within the category of electronic components, ICs. It's used in a variety of industries, including communications gear, wired networking, industrial motor drives, and personal devices like PCs and notebooks. Trans IGBT Chip N-CH 1200V 10A Die on Film/Wafe is this part's primary specification. It is also environmentally friendly and RoHS compliant (lead-free).