SIGC156T60NR2CX7SA1

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Manufacturer part number:SIGC156T60NR2CX7SA1

Manufacturer:Infineon Technologies

Description:SIGC156T60NR2CX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SIGC156T60NR2CX7SA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-55°C~150°C TJ
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	200A
Test Condition	300V, 200A, 1.5Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 200A
IGBT Type	NPT
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	180ns/285ns
RoHS Status	ROHS3 Compliant

SIGC156T60NR2CX7SA1 Description

SIGC156T60NR2CX7SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC156T60NR2CX7SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC156T60NR2CX7SA1 has the common source configuration.

SIGC156T60NR2CX7SA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC156T60NR2CX7SA1 Applications

ISM applications

DC large signal applications

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