NGTB20N60L2TF1G Description

The NGTB20N60L2TF1G is an N-Channel IGBT, 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

NGTB20N60L2TF1G Features

• Enhansment type

• Diode VF=1.5V typ. (IF=20A)

• Maxium junction temperature Tj=175°C

• Diode trr=70ns typ.

• IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V)

• Adaption of full isolation type package

• IGBT tf=67ns typ.

NGTB20N60L2TF1G Applications

• Power factor correction of white goods appliance

• General purpose inverter

• SMPS (Switched Mode Power Supply)

• AC and DC motor drives offering speed control

• Chopper and inverters