IRG7CH37K10EF Description

IRG7CH37K10EF is a single IGBT transistor from the manufacturer Infineon Technologies with a breakdown voltage of 1200V. The operating temperature of the IRG7CH37K10EF is -40°C~175°C TJ and its Gate-Emitter Thr Voltage-Max are 7.5V. IRG7CH37K10EF has 3 pins and it is available in Bulk packaging way. The Current - Collector (Ic) (Max) of IRG7CH37K10EF is 15A.

IRG7CH37K10EF Features

• Low VCE(ON) and switching losses

• Square RBSOA and Maximum Junction Temperature 175°C

• Positive VCE (ON) Temperature Coefficient 

IRG7CH37K10EF Applications

• Medium Power Drives

• UPS

• HEV Inverter

• Welding