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IGC70T120T8RQ

IGC70T120T8RQ

IGC70T120T8RQ

Infineon Technologies

IGC70T120T8RQ datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGC70T120T8RQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case Die
Packaging Bulk
Published 2015
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.42V @ 15V, 75A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 225A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.50000 $13.5
IGC70T120T8RQ Product Details

IGC70T120T8RQ Description

 

IGC70T120T8RQ transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGC70T120T8RQ MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGC70T120T8RQ has the common source configuration.

 

 

IGC70T120T8RQ Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IGC70T120T8RQ Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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