IGC70T120T8RQ datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IGC70T120T8RQ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Packaging
Bulk
Published
2015
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2.42V @ 15V, 75A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
225A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.50000
$13.5
IGC70T120T8RQ Product Details
IGC70T120T8RQ Description
IGC70T120T8RQ transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGC70T120T8RQ MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGC70T120T8RQ has the common source configuration.