IRG7CH75K10EF Description

IRG7CH75K10EF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its square RBSOA and maximum junction temperature rated at 175°C, improved reliability can be ensured due to rugged hard switching performance and higher power capability. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. 

IRG7CH75K10EF Features

Low VCE(ON) and switching Losses

Square RBSOA 

Maximum junction temperature 175°C

Positive VCE (ON) temperature coefficient

Integrated gate resistor 

IRG7CH75K10EF Applications

Medium power drives

UPS

HEV inverter

Welding