IRG7PH35UD1MPBF               Description

 The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

IRG7PH35UD1MPBF             Features

? Low VCE (ON) trench IGBT Technology

? Low Switching Losses

? Square RBSOA

? Ultra-Low VF Diode

? 1300Vpk Repetitive Transient Capacity

? 100% of the Parts Tested for ILM

? Positive VCE (ON) Temperature Co-Efficient

? Tight Parameter Distribution

? Lead Free Package

IRG7PH35UD1MPBF                         Applications

■ Industrial application on 24 V

■ Graphic cards

■ Embedded computer systems