IRG7PH42U-EP

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Manufacturer part number:IRG7PH42U-EP

Manufacturer:Infineon Technologies

Description:IRG7PH42U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH42U-EP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	385W
Base Part Number	IRG7PH42
Rise Time-Max	41ns
Element Configuration	Single
Power Dissipation	385W
Input Type	Standard
Turn On Delay Time	25 ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	229 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	90A
Reverse Recovery Time	153 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2V
Test Condition	600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
IGBT Type	Trench
Gate Charge	157nC
Td (on/off) @ 25°C	25ns/229ns
Switching Energy	2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	86ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free