IRG7PH42UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7PH42UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
385W
Rise Time-Max
41ns
Element Configuration
Single
Power Dissipation
385W
Input Type
Standard
Turn On Delay Time
25 ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
229 ns
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
90A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Test Condition
600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
IGBT Type
Trench
Gate Charge
157nC
Td (on/off) @ 25°C
25ns/229ns
Switching Energy
2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
86ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRG7PH42UPBF Product Details
IRG7PH42UPBF Description
IRG7PH42UPBF IGBT is built on a brand new idea of planar technology to create an IGBT that has a more precise variation of the energy of switching against temperature. IGBT IRG7PH42UPBF is the subset of IGBTs that are suited to operate at a high frequency that exceeds 100 kHz. IRG7PH42UPBF Infineon Technologies is suitable for Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Power Supplies, Consumer Electronics Power Supplies.