IXGM30N60

new-10%

Manufacturer part number:IXGM30N60

Manufacturer:IXYS

Description:POWER MOSFET TO-3

Case Package:SOT-23

Datasheet:IXGM30N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-204AE
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Subcategory	Insulated Gate BIP Transistors
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
JESD-30 Code	O-MBFM-P2
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	200ns
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	200ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	50A
Power Dissipation-Max (Abs)	200W
Turn On Time	300 ns
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Turn Off Time-Nom (toff)	1100 ns
Gate Charge	180nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	100ns/500ns
Gate-Emitter Voltage-Max	30V
VCEsat-Max	2.5 V
Gate-Emitter Thr Voltage-Max	5V
Power Dissipation Ambient-Max	200W
Fall Time-Max (tf)	2000ns
RoHS Status	ROHS3 Compliant