SIGC05T60SNCX1SA4  Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capabilities are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in a safer paralleling operation.

SIGC05T60SNCX1SA4  Features

10 μs of short-circuit withstand time

VCE(sat)= 1.85 V (typ.) @ IC= 15 A

Tight parameters distribution

Safer paralleling

Low thermal resistance

Soft and fast recovery antiparallel diode