NGTB75N65FL2WAG Description

This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop II Trench structure. It performs exceptionally well in demanding switching applications. Additionally, compared to the conventional TO247-3L packaging, the novel device is packaged in a TO247-4L container that significantly reduces Eon Losses. The IGBT is a good choice for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is incorporated into the device.

NGTB75N65FL2WAG Features

• Emitter Drive Pin Separate

• TO4L for Minimal Eon Losses

• Designed with High Speed Switching in Mind

• These devices don't contain pb.

NGTB75N65FL2WAG Applications

• Inverter solar

• Supplies for Uninterruptible Power Inverters (UPS)

• Topology for Neutral Point Clamps