NGTD20T120F2SWK Description

Insulated Gate Bipolar Transistor (IGBT) NGTD20T120F2SWK offers exceptional performance in demanding switching applications, offering both low on state voltage and minimal switching loss. It also has a durable and economical Field Stop II Trench structure.

NGTD20T120F2SWK Features

• TJmax = 175°C

• These are Pb?Free Devices

• 10 μs Short Circuit Capability

• Optimized for High-Speed Switching

• Extremely Efficient Trench with Field Stop Technology

NGTD20T120F2SWK Applications

• Welding

• Solar Inverter

• Uninterruptible Power Inverter Supplies (UPS)