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IRG8CH37K10F

  • IRG8CH37K10F
  • IRG8CH37K10F

IRG8CH37K10F

IRG8CH37K10F

Infineon Technologies

IRG8CH37K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG8CH37K10F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature (Max) 175°C
Input Type Standard
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
Collector Current-Max (IC) 35A
Gate Charge 210nC
Td (on/off) @ 25°C 35ns/190ns
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
IRG8CH37K10F Product Details

IRG8CH37K10F Description


IRG8CH37K10F is a single IGBT with a break down voltage of 1200V from Infineon Technologies. IRG8CH37K10F operates between -40°C~175°C TJ, and its maximum collector current is 100A. The IRG8CH37K10F has three pins and it is available in Tape & Reel (TR) packaging way. IRG8CH37K10F has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



IRG8CH37K10F Features


  • Gate-Emitter Voltage-Max: 30V

  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Gate-Emitter Thr Voltage-Max: 6.5V

  • Test Condition: 600V, 35A, 5 Ω, 15V



IRG8CH37K10F Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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