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IRG8P40N120KDPBF

  • IRG8P40N120KDPBF
  • IRG8P40N120KDPBF

IRG8P40N120KDPBF

IRG8P40N120KDPBF

Infineon Technologies

IRG8P40N120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG8P40N120KDPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 305W
Reach Compliance Code unknown
Element Configuration Single
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 40A
Reverse Recovery Time 80 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
Gate Charge 240nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 40ns/245ns
Switching Energy 1.6mJ (on), 1.8mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
RoHS Status RoHS Compliant
Lead Free Lead Free
IRG8P40N120KDPBF Product Details

IRG8P40N120KDPBF Description


The IRG8P40N120KDPBF is Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.



IRG8P40N120KDPBF Features


  • Benchmark Low VCE(ON) 

  • High Efficiency in Motor Drive Applications

  • 10μs Short Circuit SOA 

  • Increases margin for short circuit protection scheme

  • Positive VCE(ON) Temperature Coefficient 

  • Excellent Current Sharing in Parallel Operation

  • Square RBSOA and high ILM- rating 

  • Rugged Transient Performance

  • Lead-Free, RoHS compliant 

  • Environmentally friendly 



IRG8P40N120KDPBF Applications


  • Industrial Motor Drive

  • UPS

  • Solar Inverters

  • Welding 


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