IRG8P50N120KD-EPBF Description

IRG8P50N120KD-EPBF is a single IGBT transistor from the manufacturer Infineon Technologies with a breakdown voltage of 1200V. The operating temperature of the IRG8P50N120KD-EPBF is 

-40°C~150°C TJ and its maximum power dissipation is 350W. IRG8P50N120KD-EPBF has 3 pins and it is available in Tube packaging way. The Max Collector Current of IRG8P50N120KD-EPBF is 50A.

IRG8P50N120KD-EPBF Features

• Collector-Emitter Voltage (VCEO): 2V

• Reverse Recovery Time: 170 ns

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Switching Energy: 2.3mJ (on), 1.9mJ (off)

• Test Condition: 600V, 35A, 5 Ω, 15V

• Gate Charge: 315nC

IRG8P50N120KD-EPBF Applications

• Industrial Motor Drive

• UPS

• Solar Inverters

• Welding