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IRGB5B120KDPBF

IRGB5B120KDPBF

IRGB5B120KDPBF

Infineon Technologies

IRGB5B120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB5B120KDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Max Power Dissipation 89W
Current Rating 12A
Element Configuration Single
Power Dissipation 89W
Input Type Standard
Turn On Delay Time 22 ns
Power - Max 89W
Rise Time 19ns
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 12A
Reverse Recovery Time 160 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 2V
Test Condition 600V, 6A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 6A
IGBT Type NPT
Gate Charge 25nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 22ns/100ns
Switching Energy 390μJ (on), 330μJ (off)
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.279254 $2.279254
10 $2.150240 $21.5024
100 $2.028528 $202.8528
500 $1.913706 $956.853
1000 $1.805383 $1805.383
IRGB5B120KDPBF Product Details

IRGB5B120KDPBF Description


IRGB5B120KDPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode. The main advantages of using the Insulated Gate Bipolar Transistor over other types of transistor devices are its high voltage capability, low ON-resistance, ease of drive, relatively fast switching speeds and combined with zero gates drive current makes it a good choice for moderate speed, high voltage applications. The IRGB5B120KDPBF is offered in the TO-220AB package. It is specified for operation from –55°C to +150°C.



IRGB5B120KDPBF Features


  • Low  VCE  (on) Non-Punch Through  IGBT  Technology

  • Low Diode VF

  • 10μs Short Circuit Capability 

  • Square RBSOA

  • Ultrasoft  Diode  Reverse  Recovery  Characteristics

  • Positive  VCE  (on)  Temperature  Coefficient

  • TO-220  Package


IRGB5B120KDPBF Applications


  • inverters

  • converters 

  • power supplies

  • pulse-width modulated (PWM)

  • variable speed control

  • switch-mode power supplies 

  • solar powered DC-AC inverter


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