IXGX40N60BD1

new-10%

Manufacturer part number:IXGX40N60BD1

Manufacturer:IXYS

Description:IGBT 600V 75A 250W PLUS247

Case Package:SOT-23

Datasheet:IXGX40N60BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	55 ns
Test Condition	480V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Turn Off Time-Nom (toff)	570 ns
Gate Charge	116nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	25ns/180ns
Switching Energy	2.7mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant