IRG4BC10SD

new-10%

Manufacturer part number:IRG4BC10SD

Manufacturer:Infineon Technologies

Description:IGBT 600V 14A 38W TO220AB

Case Package:SOT-23

Datasheet:IRG4BC10SD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	38W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	28ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Turn On Time	106 ns
Test Condition	480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	76ns/815ns
Switching Energy	310μJ (on), 3.28mJ (off)
RoHS Status	Non-RoHS Compliant