APT100GT60B2RG

new-10%

Manufacturer part number:APT100GT60B2RG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 148A 3-Pin(3+Tab) T-MAX

Case Package:SOT-23

Datasheet:APT100GT60B2RG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	Thunderbolt IGBT®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	500W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	148A
Collector Emitter Breakdown Voltage	600V
Turn On Time	115 ns
Test Condition	400V, 100A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 100A
Turn Off Time-Nom (toff)	450 ns
IGBT Type	NPT
Gate Charge	460nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	40ns/320ns
Switching Energy	3.25mJ (on), 3.125mJ (off)
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	RoHS Compliant