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FGHL40S65UQ

FGHL40S65UQ

FGHL40S65UQ

ON Semiconductor

FGHL40S65UQ datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGHL40S65UQ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature -55°C~175°C TJ
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Power - Max 231W
Reverse Recovery Time 319ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 80A
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 306nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 32ns/260ns
Switching Energy 1.76mJ (on), 362μJ (off)
RoHS Status ROHS3 Compliant
FGHL40S65UQ Product Details

FGHL40S65UQ Description


Using the novel field stop generation IGBT technology, ON Semiconductor's new series of field stop 4th generation of RC IGBTs offer superior conduction and switching performance and easy parallel operation. The FGHL40S65UQ device is well suited for the resonant or soft switching application such as induction heating and microwave oven.



FGHL40S65UQ Features


  • Maximum Junction Temperature: TJ = 175°C

  • Positive Temperature Co?efficient for Easy Parallel Operating

  • High Current Capability

  • Low Saturation Voltage: VCE(sat) = 1.36 V (Typ.) @IC = 40 A

  • 100% of the Parts tested for ILM 

  • High Input Impedance

  • Fast Switching

  • Tighten Parameter Distribution

  • RoHS Compliant

  • IGBT with Monolithic Reverse Conducting Diode



FGHL40S65UQ Applications


  • Induction Heating

  • Microwave Oven

  • Soft Switching Application

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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