IRGS4610DTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGS4610DTRRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
77W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Element Configuration
Single
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
10A
Reverse Recovery Time
74 ns
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
16A
Collector Emitter Saturation Voltage
2.14V
Test Condition
400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 6A
Gate Charge
13nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
27ns/75ns
Switching Energy
56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
RoHS Compliant
IRGS4610DTRRPBF Product Details
IRGS4610DTRRPBF Description
IRGS4610DTRRPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE(ON) and switching losses, it is able to provide high efficiency in a wide range of applications and switching frequencies. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. Improved reliability can be ensured due to rugged hard switching performance and higher power capability.