IRGC4067EFX7SA1 Description

IRGC4067EFX7SA1 is a 600v IGBT Die in Wafer Form. The Infineon IRGC4067EFX7SA1 provides high efficiency in a wide range of applications, and rugged transient performance for increased reliability. The IRGC4067EFX7SA1 is suitable for a wide range of switching frequencies due to low VCE(ON) and low switching losses. The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.

IRGC4067EFX7SA1 Features

100% Tested at Probe

Available in Chip Pack. Unsawn wafer, Sawn on Film

Low VCE (on) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

Positive VCE (on) Temperature Coefficient

Tighter Distribution of Parameters

IRGC4067EFX7SA1 Applications

Consumer electronics

Industrial technology

The energy sector

Aerospace electronic devices

Transportation