IRGI4086PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGI4086PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Supplier Device Package
TO-220AB Full-Pak
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
43W
Element Configuration
Single
Power Dissipation
43W
Input Type
Standard
Power - Max
43W
Collector Emitter Voltage (VCEO)
2.96V
Max Collector Current
25A
Collector Emitter Breakdown Voltage
300V
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
25A
Collector Emitter Saturation Voltage
1.55V
Test Condition
196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic
2.96V @ 15V, 120A
IGBT Type
Trench
Gate Charge
65nC
Td (on/off) @ 25°C
36ns/112ns
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.789874
$1.789874
10
$1.688560
$16.8856
100
$1.592981
$159.2981
500
$1.502812
$751.406
1000
$1.417748
$1417.748
IRGI4086PBF Product Details
IRGI4086PBF Description
IRGI4086PBF is a 300v PDP trench IGBT. This IGBT IRGI4086PBF is specifically designed for applications in Plasma Display Panels. This transistor IRGI4086PBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRGI4086PBF a highly efficient, robust, and reliable device for PDP applications.
IRGI4086PBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency