STGD5NB120SZ-1

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Manufacturer part number:STGD5NB120SZ-1

Manufacturer:STMicroelectronics

Description:STGD5NB120SZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD5NB120SZ-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount, Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	75W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD5
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	690 ns
Power - Max	75W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	12.1 μs
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	10A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Max Breakdown Voltage	1.2kV
Turn On Time	850 ns
Test Condition	960V, 5A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 5A
Turn Off Time-Nom (toff)	14100 ns
Td (on/off) @ 25°C	690ns/12.1μs
Switching Energy	2.59mJ (on), 9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free