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TIG062E8-TL-H

TIG062E8-TL-H

TIG062E8-TL-H

ON Semiconductor

TIG062E8-TL-H datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

TIG062E8-TL-H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Collector Emitter Voltage (VCEO) 8V
Collector Emitter Breakdown Voltage 400V
Vce(on) (Max) @ Vge, Ic 8V @ 3V, 100A
Current - Collector Pulsed (Icm) 150A
Radiation Hardening No
RoHS Status RoHS Compliant
TIG062E8-TL-H Product Details

TIG062E8-TL-H Description


TIG062E8-TL-H is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 400V. The operating temperature of TIG062E8-TL-H is -55°C~175°C TJ and its Collector-Emitter Voltage (VCEO) is 8V. TIG062E8-TL-H has 8 pins and it is available in Tape & Reel (TR) packaging way. The Current - Collector Pulsed (Icm) of TIG062E8-TL-H is 150A.



TIG062E8-TL-H Features


  • Low-saturation voltage.

  • Low voltage drive (3V).

  • Enhansment type.

  • Built-in Gate-to-Emitter protection diode.

  • Mounting Height 0.9mm, Mounting Area 8.12mm2

  • dv / dt guarantee*.

  • Halogen free compliance.



TIG062E8-TL-H Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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