IRGB6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGB6B60KPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
Voltage - Rated DC
600V
Max Power Dissipation
90W
Current Rating
13A
Number of Elements
1
Element Configuration
Single
Power Dissipation
90W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
17ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
13A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
45 ns
Test Condition
400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 5A
Turn Off Time-Nom (toff)
258 ns
IGBT Type
NPT
Gate Charge
18.2nC
Current - Collector Pulsed (Icm)
26A
Td (on/off) @ 25°C
25ns/215ns
Switching Energy
110μJ (on), 135μJ (off)
Height
8.77mm
Length
10.54mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.553659
$0.553659
10
$0.522320
$5.2232
100
$0.492755
$49.2755
500
$0.464863
$232.4315
1000
$0.438550
$438.55
IRGB6B60KPBF Product Details
IRGB6B60KPBF Description
IRGB6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGB6B60KPBF IGBT delivers rugged transient performance and low EMI.