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IRGB6B60KPBF

IRGB6B60KPBF

IRGB6B60KPBF

Infineon Technologies

IRGB6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB6B60KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Voltage - Rated DC 600V
Max Power Dissipation 90W
Current Rating 13A
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 45 ns
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge 18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.553659 $0.553659
10 $0.522320 $5.2232
100 $0.492755 $49.2755
500 $0.464863 $232.4315
1000 $0.438550 $438.55
IRGB6B60KPBF Product Details

IRGB6B60KPBF Description


IRGB6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGB6B60KPBF IGBT delivers rugged transient performance and low EMI.



IRGB6B60KPBF Features


Low EMI

10μs short circuit capability

Square RBSOA

Ultrasoft diode reverse recovery characteristics

Positive VCE (on) temperature coefficient



IRGB6B60KPBF Applications


UPS

Motor control


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