IRGB10B60KDPBF

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Manufacturer part number:IRGB10B60KDPBF

Manufacturer:Infineon Technologies

Description:IRGB10B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGB10B60KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	156W
Current Rating	22A
Number of Elements	1
Element Configuration	Single
Power Dissipation	156W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	22A
Reverse Recovery Time	90 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	50 ns
Test Condition	400V, 10A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 10A
Turn Off Time-Nom (toff)	276 ns
IGBT Type	NPT
Gate Charge	38nC
Current - Collector Pulsed (Icm)	44A
Td (on/off) @ 25°C	30ns/230ns
Switching Energy	140μJ (on), 250μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Height	16.51mm
Length	10.6426mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free