IXGP30N60B2

new-10%

Manufacturer part number:IXGP30N60B2

Manufacturer:IXYS

Description:IGBT 600V 70A 190W TO220

Case Package:SOT-23

Datasheet:IXGP30N60B2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	190W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*30N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	190W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	30 ns
Test Condition	400V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 24A
Turn Off Time-Nom (toff)	350 ns
Gate Charge	66nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	13ns/110ns
Switching Energy	320μJ (off)
RoHS Status	ROHS3 Compliant