IRG7PG35U-EPBF Description

IRG7PG35U-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged transient performance. Moreover, the IRG7PG35U-EPBF IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.

IRG7PG35U-EPBF Features

Tight parameter distribution

Low VCE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Positive VCE (ON) temperature coefficient

Ultra-fast soft recovery co-packaged diode

IRG7PG35U-EPBF Applications

U.P.S

Welding

Solar inverter

Induction heating