IRG4PC50SDPBF

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Manufacturer part number:IRG4PC50SDPBF

Manufacturer:Infineon Technologies

Description:IRG4PC50SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC50SDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	33 ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	980 ns
Collector Emitter Voltage (VCEO)	1.36V
Max Collector Current	70A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.36V
Turn On Time	62 ns
Test Condition	480V, 41A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.36V @ 15V, 41A
Turn Off Time-Nom (toff)	1700 ns
Gate Charge	180nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	33ns/650ns
Switching Energy	720μJ (on), 8.27mJ (off)
RoHS Status	RoHS Compliant
Lead Free	Lead Free