IRGP4069-EPBF

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Manufacturer part number:IRGP4069-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4069-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4069-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	268W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	42ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	268W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.85V
Max Collector Current	76A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Turn On Time	78 ns
Test Condition	400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 35A
Turn Off Time-Nom (toff)	188 ns
IGBT Type	Trench
Gate Charge	104nC
Current - Collector Pulsed (Icm)	105A
Td (on/off) @ 25°C	46ns/105ns
Switching Energy	390μJ (on), 632μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	54ns
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant