IRGP4069-EPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is the IRGP4069-EPBF.
IRGP4069-EPBF Features
? High Performance across a Variety of Applications
? Because of its low VCE (ON) and low switching losses, it is suitable for a wide range of switching frequencies.
? Tough Transient Operation for Enhanced Reliability
? Excellent Parallel Operation with Current Sharing
IRGP4069-EPBF Applications
Switching applications
