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IRGPS4067DPBF

IRGPS4067DPBF

IRGPS4067DPBF

Infineon Technologies

IRGPS4067DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGPS4067DPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 750W
Number of Elements 1
Element Configuration Single
Power Dissipation 750W
Case Connection COLLECTOR
Input Type Standard
Transistor Application GENERAL PURPOSE SWITCHING
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 240A
Reverse Recovery Time 130 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 80 ns
Test Condition 400V, 120A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 120A
Turn Off Time-Nom (toff) 230 ns
IGBT Type Trench
Gate Charge 240nC
Current - Collector Pulsed (Icm) 360A
Td (on/off) @ 25°C 80ns/190ns
Switching Energy 5.75mJ (on), 3.43mJ (off)
Height 20.8mm
Length 16.1mm
Width 5.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
IRGPS4067DPBF Product Details
IRGPS4067DPBF Description

The IRGPS4067DPBF is insulated gate bipolar transistor with transistor with ultrafast soft recovery diode.

IRGPS4067DPBF Features

Low VCE (on) Trench IGBT Technology
Low Switching Losses
5μs SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant

IRGPS4067DPBF Applications

Variable-frequency drives (VFDs),
Electric cars
Trains
Variable-speed refrigerators
Lamp ballasts
Arc-welding machines
Air conditioners

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