IRGR2B60KDTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGR2B60KDTRLPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
35W
Base Part Number
IRGR2B60
Rise Time-Max
25ns
Element Configuration
Single
Input Type
Standard
Power - Max
35W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.25V
Max Collector Current
6.3A
Reverse Recovery Time
68 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 2A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 2A
IGBT Type
NPT
Gate Charge
12nC
Current - Collector Pulsed (Icm)
8A
Td (on/off) @ 25°C
11ns/150ns
Switching Energy
74μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
75ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRGR2B60KDTRLPBF Product Details
IRGR2B60KDTRLPBF Description
IRGR2B60KDTRLPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 10μs short circuit SOA, it is able to provide rugged transient performance for increased reliability. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides increased reliability based on the maximum junction temperature rated at 175°C.