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SIGC54T60R3EX1SA3

  • SIGC54T60R3EX1SA3
  • SIGC54T60R3EX1SA3

SIGC54T60R3EX1SA3

SIGC54T60R3EX1SA3

Infineon Technologies

SIGC54T60R3EX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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SIGC54T60R3EX1SA3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2011
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUUC-N10
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 100A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 100A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 300A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC54T60R3EX1SA3 Product Details

SIGC54T60R3EX1SA3 Description


SIGC54T60R3EX1SA3 is a 600v TRENCHSTOPTM IGBT3 Chip. The Infineon SIGC54T60R3EX1SA3 is recommended for power modules and discrete components. The transistor SIGC54T60R3EX1SA3 can be applied in drives, white goods, and resonant applications due to the following features. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor SIGC54T60R3EX1SA3 is in the Sawn on foil package.



SIGC54T60R3EX1SA3 Features


600V trench & field stop technology

Low VcEsat

Low turn-off losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC54T60R3EX1SA3 Applications


Power modules

Discrete components

Drives

White goods

Resonant applications


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