IRG4BC30KDSTRRP

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Manufacturer part number:IRG4BC30KDSTRRP

Manufacturer:Infineon Technologies

Description:IRG4BC30KDSTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30KDSTRRP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG4BC30KD-SPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	28A
Reverse Recovery Time	42 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	100 ns
Test Condition	480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 16A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	67nC
Current - Collector Pulsed (Icm)	56A
Td (on/off) @ 25°C	60ns/160ns
Switching Energy	600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	120ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant