IRGBC30S Description

With a voltage of 600V, the IRGBC30S is an insulated Gate Bipolar Transistor from Infineon Technologies. IRGBC30S has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 100W. International Rectifier's Insulated Gate Bipolar Transistors (IGBTs) feature better useable current densities than comparable bipolar transistors while requiring less gate drive than the more familiar power MOSFET. They provide significant advantages in a variety of high-voltage, high-current applications.

IRGBC30S Features

• The switching-loss rating includes all "tail" losses

• Optimized for line frequency operation ( to 400 Hz)

IRGBC30S Applications

• General-purpose amplifier

• Switching applications

• Power management

• Industrial