IXGH42N30C3

new-10%

Manufacturer part number:IXGH42N30C3

Manufacturer:IXYS

Description:IGBT 300V 223W TO247

Case Package:SOT-23

Datasheet:IXGH42N30C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	223W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	223W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	300V
Max Collector Current	42A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	300V
Collector Emitter Saturation Voltage	1.54V
Turn On Time	43 ns
Test Condition	200V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 42A
Turn Off Time-Nom (toff)	229 ns
IGBT Type	PT
Gate Charge	76nC
Current - Collector Pulsed (Icm)	250A
Td (on/off) @ 25°C	21ns/113ns
Switching Energy	120μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	120ns
Height	21.46mm
Length	16.26mm
Width	5.3mm
RoHS Status	ROHS3 Compliant