FDPF6N60ZUT

new-10%

Manufacturer part number:FDPF6N60ZUT

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V TO-220F-3

Case Package:SOT-23

Datasheet:FDPF6N60ZUT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	33.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	865pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	2Ohm
DS Breakdown Voltage-Min	600V
Height	16.07mm
Length	10.36mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant