IRLMS2002 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLMS2002 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tube
Published
2003
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G6
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1310pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.5A Ta
Gate Charge (Qg) (Max) @ Vgs
22nC @ 5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Drain Current-Max (Abs) (ID)
6.5A
Drain-source On Resistance-Max
0.03Ohm
Pulsed Drain Current-Max (IDM)
20A
DS Breakdown Voltage-Min
20V
RoHS Status
Non-RoHS Compliant
IRLMS2002 Product Details
IRLMS2002 Description
International Rectifier's N-Channel MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This feature provides the designer with a device that is particularly efficient for battery and load management applications.
With its tailored leadframe, the Micro6TM package offers a HEXFET? power MOSFET with RDS(on) 60 percent lower than a similar size SOT-23. This packaging is suited for situations where space on the printed circuit board is limited. When compared to the SOT-23, its unique thermal design and RDS(on) reduction allows for a nearly 300 percent boost in current handling.