IXFX20N120

new-10%

Manufacturer part number:IXFX20N120

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXFX20N120Power MOSFET, HiPerFET, N Channel, 20 A, 1.2 kV, 750 mohm, 10 V, 4.5 V

Case Package:SOT-23

Datasheet:IXFX20N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	750mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	780W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	750m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	7400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	75 ns
Reverse Recovery Time	300 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.2kV
Pulsed Drain Current-Max (IDM)	80A
Dual Supply Voltage	1.2kV
Avalanche Energy Rating (Eas)	2000 mJ
Nominal Vgs	4.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free