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IXGH12N60BD1

IXGH12N60BD1

IXGH12N60BD1

IXYS

IGBT 600V 24A 100W TO247AD

SOT-23

IXGH12N60BD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFAST™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*12N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 24A
Reverse Recovery Time 35 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Test Condition 480V, 12A, 18 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Gate Charge 32nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 20ns/150ns
Switching Energy 500μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 270ns
RoHS Status RoHS Compliant

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