IRGP4263D1-EPBF Description

IRGP4263D1-EPBF is a 650v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP4263D1-EPBF provides high efficiency in a wide range of applications and switching frequencies and improved reliability due to rugged hard switching performance and higher power capability. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGP4263D1-EPBF is in the TO-247AD package with 325W power dissipation.

IRGP4263D1-EPBF Features

Low V CE(ON) and switching losses

Square RBSOA and maximum junction temperature 175°C

Positive VCE (ON) temperature coefficient

5.5μs short circuit SOA

Lead-free, RoHS compliant

IRGP4263D1-EPBF Applications

Industrial motor drive

UPS

Solar Inverters

Welding