IRG4BC40W-S Description
IRG4BC40W-S is a 600V insulated gate bipolar transistor. The Infineon is designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications. Latest-generation IGBT design and construction offer tighter parameters distribution and exceptional reliability. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC40W-S is in the D2PAK package with 160W power dissipation.
IRG4BC40W-S Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Collector-to-Emitter Breakdown Voltage: 600V
Continuous Collector Current: 40A
Continuous Collector Current: 20 A
Pulsed Collector Current?:160A
Clamped Inductive Load Current②: 160A
Gate-to-Emitter Voltage: ±20V
IRG4BC40W-S Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
