SIGC05T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC05T60SNCX1SA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
4A
Test Condition
400V, 4A, 67Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 4A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
12A
Td (on/off) @ 25°C
22ns/264ns
RoHS Status
ROHS3 Compliant
SIGC05T60SNCX1SA1 Product Details
SIGC05T60SNCX1SA1 Description
The SIGC05T60SNCX1SA1 is an IGBT Chip in NPT-technology. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.