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SIGC05T60SNCX1SA1

SIGC05T60SNCX1SA1

SIGC05T60SNCX1SA1

Infineon Technologies

SIGC05T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC05T60SNCX1SA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 4A
Test Condition 400V, 4A, 67Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
IGBT Type NPT
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 22ns/264ns
RoHS Status ROHS3 Compliant
SIGC05T60SNCX1SA1 Product Details

SIGC05T60SNCX1SA1 Description


The SIGC05T60SNCX1SA1 is an IGBT Chip in NPT-technology. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.



SIGC05T60SNCX1SA1 Features


  • Short circuit prove

  • Positive temperature coefficient

  • Easy paralleling

  • 600V NPT technology

  • 100μm chip



SIGC05T60SNCX1SA1 Applications


  • Drives

  • Chopper and inverters

  • Solar inverters

  • AC and DC motor drives

  • Switched Mode Power Supply


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