SIGC42T60UNX7SA2 Description

SIGC42T60UNX7SA2 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 

SIGC42T60UNX7SA2 Features

Voltage - Collector Emitter Breakdown (Max): 600V

Operating Temperature: -55°C~150°C TJ

Current - Collector (Ic) (Max): 50A

Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A

SIGC42T60UNX7SA2 Applications

Drives