SIGC100T60R3EX7SA1

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Manufacturer part number:SIGC100T60R3EX7SA1

Manufacturer:Infineon Technologies

Description:SIGC100T60R3EX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SIGC100T60R3EX7SA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-40°C~175°C TJ
Series	TrenchStop™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	200A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 200A
IGBT Type	Trench Field Stop
Current - Collector Pulsed (Icm)	600A
RoHS Status	ROHS3 Compliant

SIGC100T60R3EX7SA1 Description

SIGC100T60R3EX7SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC100T60R3EX7SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC100T60R3EX7SA1 has the common source configuration.

SIGC100T60R3EX7SA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC100T60R3EX7SA1 Applications

ISM applications

DC large signal applications

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